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High-efficiency GaSb photocells

Authors :
O. A. Khvostikova
D. Yu. Kazantsev
V. M. Andreev
V. P. Khvostikov
N. Kh. Timoshina
N. S. Potapovich
S. V. Sorokina
B. Ya. Ber
Source :
Semiconductors. 47:307-313
Publication Year :
2013
Publisher :
Pleiades Publishing Ltd, 2013.

Abstract

High-current solar cells based on gallium antimonide and intended for use in solar modules and systems with solar-spectrum splitting at large solar light concentration ratios, in thermophotovoltaic generators with a high-temperature emitter, and in laser energy converters have been designed and fabricated by the diffusion of zinc from the gas phase. The influence exerted by the thickness of the p+ diffusion layer on the basic characteristics of the solar cell has been studied. The optimal doping profile and the p-n-junction depth providing a high photovoltaic conversion efficiency at photocurrent densities of up to 100 A cm−2 have been determined.

Details

ISSN :
10906479 and 10637826
Volume :
47
Database :
OpenAIRE
Journal :
Semiconductors
Accession number :
edsair.doi...........845d51a30c6939f55335326938870778
Full Text :
https://doi.org/10.1134/s1063782613020139