Concerning lattice defects and defect levels in CuInSe2and the I‐III‐VI2compounds

This paper relates different points concerning defect levels and lattice defects in CuInSe2 and the I‐III‐VI2 compounds. First, we review the main levels observed. Second, we propose a hypothesis concerning the electrical compensation processes acting in the I‐III‐VI2 materials. Third, we discuss the nature of the defects responsible for the levels, and improve interpretations, by carrying out the deformation potential in antisite defects. Especially, these calculations reinforce the idea that the ‘‘hydrogenic‐type’’ acceptor observed in the I‐III‐VI2 materials must rather be attributed to the Cu or Ag vacancy than to an antisite defect.