Effect of nanoimprinted surface relief on Si and Ge nucleation and ordering

Surface relief formed by nanoimprinting and etching into a thermally grown SiO"2 layer on Si was used to position the initial nuclei formed by chemically vapor deposited Si and Ge. By controlling the deposition conditions, the surface diffusion length was adjusted to be comparable to or larger than the spacing between features, thus favoring nucleation adjacent to steps, rather than random nucleation. Random nucleation was further suppressed by a two-stage deposition process. Ge nucleation on oxide by chemical vapor deposition was enhanced by coating the oxide surface with an organic self-assembled monolayer (SAM) and by the nanoimprinted surface relief. The nanoimprinted surface relief also provides long-range order in the SAM.