A decoupled algorithm for a drift-diffusion model

This paper suggests a decoupled method in order to approximate a free boundary separating the depletion region and the charge neutrality region in a field effect transistor of MESFET type. In order to do that, a simplified drift-diffusion model is used. A decoupled algorithm is presented in (Math. Comput. Simulat. 1998; 47(6):531–539). In this work an existence theorem is proved, and the study of the convergence of the previous algorithm is presented with some numerical results. Copyright © 2005 John Wiley & Sons, Ltd.