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DC-DC power converter with Galium Nitride Gate Injection Transistors
- Source :
- 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- In this paper, DC-DC power converter based on Galium Nitride Gate Injection Transistors (GaN GIT) is presented. The use of such power devices allows to increase of switching frequency and to reach high efficiency. Efficiency measurements of power conversion were carried out for two switching frequencies (100 kHz, 200 kHz, 400 kHz).
- Subjects :
- Materials science
biology
business.industry
020209 energy
020208 electrical & electronic engineering
Transistor
Electrical engineering
Gallium nitride
02 engineering and technology
Nitride
biology.organism_classification
law.invention
Galium
Power (physics)
chemistry.chemical_compound
chemistry
law
Logic gate
0202 electrical engineering, electronic engineering, information engineering
Snubber
Power semiconductor device
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe)
- Accession number :
- edsair.doi...........841f343994b2da922a33fb6db247d07b