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Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
- Source :
- Journal of Semiconductors. 42:060402
- Publication Year :
- 2021
- Publisher :
- IOP Publishing, 2021.
Details
- ISSN :
- 20586140 and 16744926
- Volume :
- 42
- Database :
- OpenAIRE
- Journal :
- Journal of Semiconductors
- Accession number :
- edsair.doi...........831dba6ace3e18f5635cb009682ef374