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Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method

Authors :
Jian-Bai Xia
Source :
Journal of Semiconductors. 42:060402
Publication Year :
2021
Publisher :
IOP Publishing, 2021.

Details

ISSN :
20586140 and 16744926
Volume :
42
Database :
OpenAIRE
Journal :
Journal of Semiconductors
Accession number :
edsair.doi...........831dba6ace3e18f5635cb009682ef374