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Light assisted irreversible resistive switching in ultra thin hafnium oxide
- Source :
- RSC Advances. 5:35046-35051
- Publication Year :
- 2015
- Publisher :
- Royal Society of Chemistry (RSC), 2015.
-
Abstract
- An ultra thin film (∼5 nm) high-k Hafnium oxide dielectric, grown on a doped p-Si(100) substrate by the atomic layer deposition technique has been investigated for resistive and capacitive switching with and without illumination of light. As grown samples illustrate small non-switching leakage current under high applied electric fields and probe frequencies and trap charge assisted counter-clockwise capacitance–voltage behavior. A unique resistance switching was observed under illumination of 15–60 mW light. In the first cycle, the light assisted switching provide a 104 : 1 resistance ratio, which diminishes in the next cycle onward, which may be due to irreversible charge injection in the oxide layers. The band offset and band match-up energy diagram for the charge carriers responsible for resistive switching and charge trapping near the interface have been demonstrated under the application of a bias electric field and light.
Details
- ISSN :
- 20462069
- Volume :
- 5
- Database :
- OpenAIRE
- Journal :
- RSC Advances
- Accession number :
- edsair.doi...........830772df53940dcab931cf1a15b5172d