ChemInform Abstract: EFFECT OF GROUP V/III FLUX RATIO ON LIGHTLY SILICON-DOPED ALUMINUM GALLIUM ARSENIDE (ALXGA1-XAS) GROWN BY MOLECULAR BEAM EPITAXY

Authors :: M. Mannoh
M. Mihara
Tonao Yuasa
Y. Nomura
K. Yamanaka
Makoto Ishii
Shigeya Naritsuka
Source :: Chemischer Informationsdienst. 16
Publication Year :: 1985
Publisher :: Wiley, 1985.

Subjects :: X-ray absorption spectroscopy
Silicon
Inorganic chemistry
Doping
Analytical chemistry
chemistry.chemical_element
General Medicine
Flux ratio
Gallium arsenide
chemistry.chemical_compound
chemistry
Group (periodic table)
Aluminium
Molecular beam epitaxy

Tools