Solution-deposited GdCeOx thin films: Microstructure, band structure, and dielectric property

The microstructural and electrical properties of solution-deposited GdCeO x dielectric thin films with different mixing ratios were studied. The Ce incorporation enhanced the degree of crystallization and the refractive index of the Gd 2 O 3 film, reduced the hysteresis and increased the dielectric constant. According to reflective electron energy loss spectroscopy and X-ray photoelectron spectroscopy analyses, the bandgap of the GdCeO x film gradually decreased with increasing Ce/(Gd + Ce) atomic ratio, which was primarily affected by the reduction of the valence band offset.