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[Untitled]
- Source :
- Journal of Materials Science. 33:3251-3254
- Publication Year :
- 1998
- Publisher :
- Springer Science and Business Media LLC, 1998.
-
Abstract
- Cerium nitride films were deposited by ion plating in an electron-beam sustained Ce arc discharge in a nitrogen atmosphere. The crystal structure was strongly affected by the arc discharge current and the substrate temperature. The lattice spacing of CeN film is 0.5020 nm with a density of 7.82 g cm−3. This film showed a paramagnetic property at 10 K in a magnetic field of 20 kOe. The Knoop hardness for CeN film is over 1600. The electrical resistivity was 4.6 × 10−4 Ωcm with p-type conductivity. The carrier concentration of the CeN film increased after exposure to the air, which suggested that the valence of Ce in CeN is probably 4+.
Details
- ISSN :
- 00222461
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science
- Accession number :
- edsair.doi...........82b1a9696d383043a588f74a7f975ebc