Electrical and Metallurgical Characterization of Niobium as a Diffusion Barrier Between Aluminum and Silicon for Integrated Circuit Devices

MLA

T. E. Turner, et al. “Electrical and Metallurgical Characterization of Niobium as a Diffusion Barrier Between Aluminum and Silicon for Integrated Circuit Devices.” Journal of The Electrochemical Society, vol. 136, May 1989, pp. 1484–94. EBSCOhost, https://doi.org/10.1149/1.2096947.

APA

T. E. Turner, J. J. Barnes, & M. M. Farahani. (1989). Electrical and Metallurgical Characterization of Niobium as a Diffusion Barrier Between Aluminum and Silicon for Integrated Circuit Devices. Journal of The Electrochemical Society, 136, 1484–1494. https://doi.org/10.1149/1.2096947

Chicago

T. E. Turner, J. J. Barnes, and M. M. Farahani. 1989. “Electrical and Metallurgical Characterization of Niobium as a Diffusion Barrier Between Aluminum and Silicon for Integrated Circuit Devices.” Journal of The Electrochemical Society 136 (May): 1484–94. doi:10.1149/1.2096947.