Electronic structure of InN studied using soft x-ray emission, soft x-ray absorption, and quasiparticle band structure calculations

The electronic structure of wurtzite $\mathrm{In}\mathrm{N}(000\overline{1})$ thin films has been studied using a combination of soft x-ray emission and absorption spectroscopies. We measured the elementally and orbitally resolved InN valence and conduction bands by recording the N $K$-edge spectra. Theoretical calculations of the $\mathrm{N}\phantom{\rule{0.2em}{0ex}}2p$ partial density of states were performed within the GW framework of many body perturbation theory. Good agreement between the experimental spectra and the calculations was obtained, most notably with the energetic location of the $\mathrm{In}\phantom{\rule{0.2em}{0ex}}4d--\mathrm{N}\phantom{\rule{0.2em}{0ex}}2p$ hybridized state in the emission spectrum and the angular dependence of the absorption spectra.