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β-NiS and Ni 3 S 4 nanostructures: Fabrication and characterization
- Source :
- Materials Research Bulletin. 75:155-161
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- Nickel sulfide nanostructures have been successfully prepared with two different sulfur sources like thiourea (S C(NH 2 ) 2 ) and sodium sulfide by the successive ionic layer adsorption and reaction (SILAR) method. The functionalized nitrile-butadiene rubber (F-NBR) was used as stabilizing agent for formation of nickel sulfide semiconductor nanoparticles. The nanoparticle sizes correspond to 8.5 nm and 7 nm using thiourea and sodium sulfide respectively. The as-synthesized NiS and Ni 3 S 4 nanostructures were characterized by XRD, SEM, EDX, UV–vis and FTIR spectroscopy methods. A systematic investigation of the final end products has been done to elucidate the formation mechanism at different experimental parameters. Using thiourea the optical band gap of NiS for 4, 6 and 8 cycles were determined to be 3.12, 2.93 and 2.81 eV, respectively. The optical band gap of Ni 3 S 4 for 6 and 8 cycles were determined to be 2.8 and 2.15 eV, respectively.
- Subjects :
- Materials science
Nickel sulfide
Band gap
Mechanical Engineering
chemistry.chemical_element
Nanoparticle
02 engineering and technology
010402 general chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Sulfur
Sodium sulfide
0104 chemical sciences
chemistry.chemical_compound
Adsorption
chemistry
Thiourea
Mechanics of Materials
Organic chemistry
General Materials Science
Fourier transform infrared spectroscopy
0210 nano-technology
Nuclear chemistry
Subjects
Details
- ISSN :
- 00255408
- Volume :
- 75
- Database :
- OpenAIRE
- Journal :
- Materials Research Bulletin
- Accession number :
- edsair.doi...........820533506a707585daf463eebcaaeae2
- Full Text :
- https://doi.org/10.1016/j.materresbull.2015.11.037