Investigation of Methods That Greatly Improve 3D NOR Flash to Either Gain Superb Retention or Become DRAM-like with High Endurance $(> 1\mathrm{G}$ cycling) and High Write-bandwidth $(> 4\text{Gb}/\mathrm{s})$

Authors :: Hang-Ting Lue
Tzu-Hsuan Hsu
Chieh Lo
Teng-Hao Yeh
Keh-Chung Wang
Chih-Yuan Lu
Source :: 2021 IEEE International Electron Devices Meeting (IEDM).
Publication Year :: 2021
Publisher :: IEEE, 2021.

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