Novel (Y,Yb)MnO3 Thin Films for FeRAM Application

(Y,Yb)MnO3/Y2O3/Si structure was constructed using alkoxy-derived precursor solutions. The electrical properties of the Y2O3 films were sensitive to deposition condition. The (Y,Yb)MnO3 thin film were synthesized on Y2O3/Si(111) substrates at 750°C in Ar. The quality of Y2O3 films crystallized on Si substrates strongly affect the properties of the Pt/(Y,Yb)MnO3/Y2O3/Si. The properties of Pt/(Y,Yb)MnO3/Y2O3/Si structure could be improved by optimizing the Y2O3 layer. The counterclockwise C-V hysteresis induced by ferroelectric polarization switching was observed. The leakage current densities for the MFIS structure were about 10− 8∼10− 7 A/cm2 at an applied voltage of 5 V. The retention time of the Pt/(Y,Yb)MnO3/Y2O3/Si capacitors was over 104 s.