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Device characteristics of Ti–InSnO thin film transistors with modulated double and triple channel structures
- Source :
- Thin Solid Films. 537:275-278
- Publication Year :
- 2013
- Publisher :
- Elsevier BV, 2013.
-
Abstract
- The device characteristics of Ti–InSnO thin film transistors (TFTs) with modulated channels were investigated. The field effect mobility was enhanced to 14.9 cm2/V s in the channel-modulated TFT. The electrical performance of the TFT device was improved by the insertion of a high carrier concentration layer at the channel/gate insulator and channel/electrode interfaces. It was due to the enhancement of carrier accumulation and the reduction of parasitic resistance via channel modulation. The threshold voltage was controlled at moderate value. These results indicate that the device characteristic of TFTs can be enhanced by the modulated channel structure.
- Subjects :
- Materials science
business.industry
Metals and Alloys
Field effect
Surfaces and Interfaces
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Threshold voltage
Thin-film transistor
Electrode
Parasitic element
Materials Chemistry
Optoelectronics
Channel modulation
business
Layer (electronics)
Communication channel
Subjects
Details
- ISSN :
- 00406090
- Volume :
- 537
- Database :
- OpenAIRE
- Journal :
- Thin Solid Films
- Accession number :
- edsair.doi...........817856e7283ef635b4f63331d53a94f4