Cite
Optical Monitoring of Capacitance in Hemispherical Grain Polycrystalline Silicon for Advanced Dynamic Random Access Memory Application
MLA
K. N. Ritz, et al. “Optical Monitoring of Capacitance in Hemispherical Grain Polycrystalline Silicon for Advanced Dynamic Random Access Memory Application.” Journal of The Electrochemical Society, vol. 145, Nov. 1998, pp. 3935–40. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........81586d4e3bd457f582505ba75905721d&authtype=sso&custid=ns315887.
APA
K. N. Ritz, J. Opsal, Woo Sang-Ho, Hong-Seon Yang, SeoEun Lee, Seung-Woo Shin, Il-Keoun Han, Ji On Kim, & Hoon-Jung Oh. (1998). Optical Monitoring of Capacitance in Hemispherical Grain Polycrystalline Silicon for Advanced Dynamic Random Access Memory Application. Journal of The Electrochemical Society, 145, 3935–3940.
Chicago
K. N. Ritz, J. Opsal, Woo Sang-Ho, Hong-Seon Yang, SeoEun Lee, Seung-Woo Shin, Il-Keoun Han, Ji On Kim, and Hoon-Jung Oh. 1998. “Optical Monitoring of Capacitance in Hemispherical Grain Polycrystalline Silicon for Advanced Dynamic Random Access Memory Application.” Journal of The Electrochemical Society 145 (November): 3935–40. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........81586d4e3bd457f582505ba75905721d&authtype=sso&custid=ns315887.