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Memory update characteristics of carbon nanotube memristors (NRAMĀ®) under circuitry-relevant operation conditions
- Source :
- IRPS
- Publication Year :
- 2020
- Publisher :
- IEEE, 2020.
-
Abstract
- Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.
Details
- Database :
- OpenAIRE
- Journal :
- 2020 IEEE International Reliability Physics Symposium (IRPS)
- Accession number :
- edsair.doi...........810abd76408f3313c7c9546ec1c5baff