Back to Search
Start Over
Effect of Al2O3 addition on the microstructure and electrical properties of LaMnO3-based NTC thermistors
- Source :
- Journal of Materials Science: Materials in Electronics. 28:14195-14201
- Publication Year :
- 2017
- Publisher :
- Springer Science and Business Media LLC, 2017.
-
Abstract
- A study to develop a new system of negative temperature coefficient thermistors for wide temperature range, A series of Mn-based perovskite-structured ceramics of composition (LaMn1−x Al x O3)0.9(Al2O3)0.1 has been synthesized by conventional solid state reaction at 1350 °C. The X-ray diffraction patterns showed that for all the samples, the substitution of manganese by aluminum up to x = 0.1 preserved the rhombohedral perovskite LaMnO3-like phase. For x = 0.2, apart from the LaMnO3-like structure, a second perovskite phase based on the cubic LaAlO3 structure was formed. For x = 0.3 and 0.4, the phase present was LaAlO3 -type structure. The grain sizes of the sintered body detected by scanning electron microscope were decreased with increasing Al2O3 content. The resistivity increases with increasing the Al content. The obtained values of ρ 25 °C and B 25/50 and E a are in the range of 10–13103 Ω cm, 1813–2794 K, 0.156–0.241 eV, respectively. The resistance variation (ΔR/R) was
- Subjects :
- 010302 applied physics
Materials science
Scanning electron microscope
Analytical chemistry
Mineralogy
02 engineering and technology
Atmospheric temperature range
021001 nanoscience & nanotechnology
Condensed Matter Physics
Microstructure
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Electrical resistivity and conductivity
visual_art
Phase (matter)
0103 physical sciences
visual_art.visual_art_medium
Ceramic
Electrical and Electronic Engineering
0210 nano-technology
Temperature coefficient
Perovskite (structure)
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 28
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........80e13c5b4b8de954788a13adcfb59920
- Full Text :
- https://doi.org/10.1007/s10854-017-7276-9