Controlling GIDL Using Core–Shell Technique in Conventional Nano-Wire

In this paper, detailed gate-induced drain leakage (GIDL) mechanism is analyzed in conventional nano-wire. It has been seen that conventional nano-wire suffers from both lateral and transversal band-to-band tunneling. The lateral component tunneling is more severe and active when device is in OFF condition. It is one of the contributors of leakage current in nano-wire transistors. SiO2 as core–shell material is proposed for effectively controlling both lateral and transverse band-to-band tunneling (BTBT) current. The impact of core–shell on short channel parameters like Ion, Ioff, Ion/Ioff ratio, subthreshold swing and drain-induced barrier lowering (DIBL) are also analyzed. From the calibrated simulation, it has been found that the use core–shell significantly reduces Ioff with only a minor reduction in Ion. On increasing core–shell radius, drain-induced barrier lowering (DIBL), Ioff and subthreshold swing are also significantly and almost linearly decreases.