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Applications of novel effects derived from Si ingot growth inside Si melt without contact with crucible wall using noncontact crucible method to high-efficiency solar cells
- Source :
- Journal of Crystal Growth. 468:705-709
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- The noncontact crucible (NOC) method was proposed for obtaining Si single bulk crystals with a large diameter and volume using a cast furnace and solar cells with high conversion efficiency and yield. This method has several novel characteristics that originate from its key feature that ingots can be grown inside a Si melt without contact with a crucible wall. Si ingots for solar cells were grown by utilizing the merits resulting from these characteristics. Single ingots with high quality were grown by the NOC method after furnace cleaning, and the minority carrier lifetime was measured to investigate reduction of the number of impurities. A p -type ingot with a convex growth interface in the growth direction was also grown after furnace cleaning. For p -type solar cells prepared using wafers cut from the ingot, the highest and average conversion efficiencies were 19.14% and 19.0%, respectively, which were obtained using the same solar cell structure and process as those employed to obtain a conversion efficiency of 19.1% for a p -type Czochralski (CZ) wafer. Using the cast furnace, solar cells with a conversion efficiency and yield as high as those of CZ solar cells were obtained by the NOC method.
- Subjects :
- 010302 applied physics
Materials science
Metallurgy
Energy conversion efficiency
Crucible
Micro-pulling-down
02 engineering and technology
Carrier lifetime
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
law.invention
Inorganic Chemistry
law
Impurity
0103 physical sciences
Solar cell
Materials Chemistry
Wafer
Ingot
0210 nano-technology
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 468
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........805b6fe363a77683da8eddb42ba349d0