Drift mobilities in chlorine doped Cd0.8Zn0.2Te

The drift mobilities of chlorine doped high resistivity Cd 0.8 Zn 0.2 Te have been investigated by using time-of-flight technique. The electron as well as the hole mobility in the as-grown crystals are limited by trap-controlled carrier transport. The energy locations of the defects responsible for carrier trapping are estimated to be E C − 0.03 eV and E V + 0.14 eV for electrons and holes, respectively. After annealing at 400°C for 80 h, no evidence of trap-controlled mobility was recognized for electrons. On the other hand, no significant change before and after annealing was observed for hole transport. These results are explained by the complex defect model composed of Cd vacancy and chlorine donor.