Carrier-mediated Kondo effect and Hall mobility by electrolyte gating in slightly doped anataseTiO2films

Carrier density $({n}_{\mathrm{s}})$ is a crucial parameter that governs the properties of correlated oxides, so the field-effect approach is an ideal tool to investigate the novel physics of the system. Here, the carrier-mediated transport of slightly doped anatase ${\mathrm{TiO}}_{2}$ epitaxial films were studied by electric double layer transistor (EDLT) gating. The ${n}_{\mathrm{s}}$ has been increased hugely, and concomitantly, the channels of anatase ${\mathrm{TiO}}_{2}$ films undergo an insulator-metal transition with a decrease in resistivity by almost three orders of magnitude. More fascinating, the Kondo effect depends very strongly on ${n}_{\mathrm{s}}$, and the Hall mobility could be enhanced about one order of magnitude with increasing ${n}_{\mathrm{s}}$. This study shows that EDLT gating is a powerful method to stimulate and mediate novel phenomena of correlated oxides.