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Carrier-mediated Kondo effect and Hall mobility by electrolyte gating in slightly doped anataseTiO2films

Authors :
Rui-Fen Dou
Cheng-Jian Li
Shengchun Shen
Lin He
Yin-Long Han
Zhong-Zhong Luo
Guo-Liang Qu
Jia-Cai Nie
Changmin Xiong
Source :
Physical Review B. 90
Publication Year :
2014
Publisher :
American Physical Society (APS), 2014.

Abstract

Carrier density $({n}_{\mathrm{s}})$ is a crucial parameter that governs the properties of correlated oxides, so the field-effect approach is an ideal tool to investigate the novel physics of the system. Here, the carrier-mediated transport of slightly doped anatase ${\mathrm{TiO}}_{2}$ epitaxial films were studied by electric double layer transistor (EDLT) gating. The ${n}_{\mathrm{s}}$ has been increased hugely, and concomitantly, the channels of anatase ${\mathrm{TiO}}_{2}$ films undergo an insulator-metal transition with a decrease in resistivity by almost three orders of magnitude. More fascinating, the Kondo effect depends very strongly on ${n}_{\mathrm{s}}$, and the Hall mobility could be enhanced about one order of magnitude with increasing ${n}_{\mathrm{s}}$. This study shows that EDLT gating is a powerful method to stimulate and mediate novel phenomena of correlated oxides.

Details

ISSN :
1550235X and 10980121
Volume :
90
Database :
OpenAIRE
Journal :
Physical Review B
Accession number :
edsair.doi...........801817066a838629aa605fefdda5448d