Examination of pits appearing on selectively grown Si film on SiO2 patterned wafers

Pits appearing on selectively grown Si(100) epitaxial film were examined by scanning electron microscopy (SEM), cross-sectional transmittance electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDX). The pits were only observed on selectively grown Si films on SiO 2 patterned Si wafers, but not on mirror Si wafers. Amorphous nuclei consisting of silicon and oxygen existed at the bottom of the pits. The amorphous nuclei were about 50–200 nm in width and 5–10 nm in height. It was found that the Si film grew in such a manner as to avoid the amorphous Si-O nuclei and finally facets were formed, which appeared as the pits.