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Fast switching performance by 20 A / 730 V AlGaN/GaN MIS-HFET using AlON gate insulator
- Source :
- 2017 IEEE International Electron Devices Meeting (IEDM).
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- In this paper, high current and high voltage AlGaN/GaN metal-insulator-semiconductor (MIS) heterojunction field-effect transistors (HFETs) on Si are demonstrated. The devices exhibit a drain current of 20 A as well as a breakdown voltage of 730 V, serving normally-off operations. Stable interfacial characteristics free from the hysteresis in the transfer characteristics are enabled by the introduction of AlON gate insulator. A recessed gate structure formed by epitaxial regrowth of AlGaN over the grooved AlGaN/GaN heterojunction successfully reduces the on-state resistance and eliminates the processing damage on the surface of the grooved structure. Note that an oxygen annealing followed by the deposition of AlON shifts the threshold voltage V th to positive side. The resultant switching performance by the 20 A / 730 V AlGaN/GaN MIS-HFET is very fast with dV/dt of 78 V/ns and 169 V/ns for turn-on and turn-off transitions, respectively, indicating that the proposed MIS-HFETs are very promising for practical power switching applications.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Transistor
chemistry.chemical_element
Heterojunction
High voltage
02 engineering and technology
021001 nanoscience & nanotechnology
Epitaxy
01 natural sciences
law.invention
Hafnium
Threshold voltage
Hysteresis
chemistry
law
0103 physical sciences
Optoelectronics
Breakdown voltage
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE International Electron Devices Meeting (IEDM)
- Accession number :
- edsair.doi...........7fa82068b28be2d02d9be8f330401571