Sensors on low-dimensional silicon structures

The possibilities of creating sensors on the basis of silicon structures with classical and quantum-dimensional effects have been researched theoretically and experimentally. The technology of forming qnantuln-well and wire structures of porous and amorphous silicon and their modifications by multiparameter monitoring in situ has been studied. H 2 S sensor samples, developed on this basis, have a high sensitivity (on the level 10-20 ppb), low operating voltage (1-1.5 V), low power consumption (not more than 10 -8 -10 -6 W) and relative selectivity to hydrocarbons, CO and CO 2 . The most sensitive to H 2 S ate structures having p = 0.03 Ω cm, oxidized porous silicon layer thicknesses of 6-10 μcm, porosity of 0.75-0.8 and Pd layer thicknesses of 50-60 nm. The obtained results verify the principle possibilities in solving all growing contradictions between information processing and its reception by using low-dimensional structures.