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Noise and resistance as indicators of HVP stressing impact on performances of conventional TFRs
- Source :
- 2008 26th International Conference on Microelectronics.
- Publication Year :
- 2008
- Publisher :
- IEEE, 2008.
-
Abstract
- In order to determine possible causes of resistance and noise index changes in thick-film resistors during high- voltage pulse stressing, deterministic model was used. Irreversible micro- and macro-structural changes observed during high- voltage pulse stressing of thick film resistors based on 1, 10 and 100 kOmega/sq compositions were analyzed and performed analysis resulted in determination of primary technological, geometrical and physical parameters responsible for observed changes.
Details
- Database :
- OpenAIRE
- Journal :
- 2008 26th International Conference on Microelectronics
- Accession number :
- edsair.doi...........7f09278252810562bd1e28baff07fbc2