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Noise and resistance as indicators of HVP stressing impact on performances of conventional TFRs

Authors :
Milan Jevtic
I. Stanimirovic
Z. Stanimirovic
Source :
2008 26th International Conference on Microelectronics.
Publication Year :
2008
Publisher :
IEEE, 2008.

Abstract

In order to determine possible causes of resistance and noise index changes in thick-film resistors during high- voltage pulse stressing, deterministic model was used. Irreversible micro- and macro-structural changes observed during high- voltage pulse stressing of thick film resistors based on 1, 10 and 100 kOmega/sq compositions were analyzed and performed analysis resulted in determination of primary technological, geometrical and physical parameters responsible for observed changes.

Details

Database :
OpenAIRE
Journal :
2008 26th International Conference on Microelectronics
Accession number :
edsair.doi...........7f09278252810562bd1e28baff07fbc2