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Correction: Chen et al. New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device. Materials 2022, 15, 3640
- Source :
- Materials. 15:6738
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- The authors would like to make corrections to a recently published paper [...]
- Subjects :
- General Materials Science
Subjects
Details
- ISSN :
- 19961944
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Materials
- Accession number :
- edsair.doi...........7eec4e96c1cff1d13f8bf6ba9dad9cbe