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The characteristics of semiconducting Ba1-xSrxTiO3 samples with different doping procedures were studied. Complex impedance-measurements were used to separate the resistances of grains Rb, and grain boundaries as Rgb. It was shown that excess donors added after calcination diffused into the grain bulk more slowly and could be compensted on the grain boundary by acceptors, and thus samples with particularly low resistivity were obtained. Using an excess donor to compensate for the acceptor, a sample with room temperature resistivity of ∼200 Ω cm-1 and greater than 7.8 orders of jumping of resistance was obtained.