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Improvement of Schottky Junctions for application in BESOI MOSFET
- Source :
- 2021 35th Symposium on Microelectronics Technology and Devices (SBMicro).
- Publication Year :
- 2021
- Publisher :
- IEEE, 2021.
-
Abstract
- In this work, an improvement of Schottky junction was performed for application in Back Enhanced BESOI MOSFET. It was observed that the formation of NiSi prior to the deposition of the aluminum on it, protects the Schottky junction from the aluminum interaction with Ni during thermal treatment. As a result, the Schottky junction obtained with this new process fabrication presents a better electrical behavior with ideality factor, n, close to 1 (n = 1.02 for Werner method and n = 0.95 for Gromov method) and Schottky barrier height, Φ b = 0.42 eV.
Details
- Database :
- OpenAIRE
- Journal :
- 2021 35th Symposium on Microelectronics Technology and Devices (SBMicro)
- Accession number :
- edsair.doi...........7ebd9f1a95fae736c28f50dcd5daaf58