Sur une famille de tellurures ternaires formes par le gallium avec l'etain II, le plomb ou l'indium I, de type SnGa6Te10

Two isostructural compounds are observed in the phase diagrams of the systems Ga2Te3-SnTe and Ga2Te3-PbTe. They have the general formula MGa6Te10 (M = Sn″ or Pb). They present a peritectic decomposition, at respectively 695 et 725°. The crystal structure is solved for SnGa6Te10. The rhombohedral cell, space group R32, contains 2 formulas ; a = 10.207 A, α = 89,74°. Gallium atoms are inside fully occupied tetrahedral sites. Tin atoms partially occupy, in a disordered way, 2 octahedral sites. The same structural type is observed for In2Ga6Te10, in which all the octahedral sites are filled.