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X-ray diffraction study of defect distribution in Czochralski grown silicon highly doped by As
- Source :
- Journal of Physics D: Applied Physics. 38:A111-A116
- Publication Year :
- 2005
- Publisher :
- IOP Publishing, 2005.
-
Abstract
- A combination of x-ray diffraction methods and electron microscopy was used for the structural study of Czochralski silicon crystals highly doped by As. For as-grown crystals a weak strain field and probable clustering of As-impurity atoms follow from section topography and a reduction in the Borrmann effect intensity. For annealed crystals, it is shown that precipitates and dislocation loops are formed during annealing. The defects are located in highly distorted stripes lying nearly parallel to the crystal surface with period 200?300??m. The concentration of the defects drastically decreases along the crystal radius from the centre to the periphery and along the growth axis from the seed. The average size of the defects obtained from the diffuse scattering increases with increasing distance from the centre to the periphery and along the growth axis from the seed. One concludes that the dependence of the defect parameters observed is associated with the change in oxygen concentration along the crystal radius and growth axis.
- Subjects :
- Diffraction
Materials science
Acoustics and Ultrasonics
Silicon
Condensed matter physics
Annealing (metallurgy)
Doping
chemistry.chemical_element
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
law.invention
Crystal
Crystallography
Distribution function
chemistry
law
Condensed Matter::Superconductivity
X-ray crystallography
Electron microscope
Subjects
Details
- ISSN :
- 13616463 and 00223727
- Volume :
- 38
- Database :
- OpenAIRE
- Journal :
- Journal of Physics D: Applied Physics
- Accession number :
- edsair.doi...........7e872edfd7ec325cffb8c43671bbbb3b