Characterization of In2Sn3 films obtained by slurry painting

Layers of ln2S3 were prepared by a slurry painting method from powder of the respective semiconductor, followed by annealing in nitrogen and hydrogen. The layers were characterized by X-ray powder diffraction, surface analysis, optical properties and for their photoelectrochemical behaviour. Incorporation of the flux model InCl3 into the layers produces recrystallization and growth of large grains and it can also act as a dopant for the semiconductor.