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Spin coherence enhanced by in-plane electric field-induced spin-orbit interaction

Authors :
Nitta Junsaku
Makoto Kohda
Tetsuomi Sogawa
Koji Onomitsu
Yoji Kunihashi
Hideki Gotoh
Haruki Sanada
Source :
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Publication Year :
2016
Publisher :
IEEE, 2016.

Abstract

We investigated the dependence of spatial spin distribution on bias voltage in a GaAs quantum well with Kerr rotation microscopy. The spin precession frequency of drifting spins depends on in-plane electric fields, which indicates that effective magnetic fields induced by spin-orbit interactions are modulated by in-plane electric fields. By comparing an experimental result and a theoretical simulation based on the Monte Carlo approach, we confirmed that the in-plane electric field dependence of effective magnetic fields can be attributed to the k-cubic term of the Dresselhaus spin-orbit interaction. We found that spin coherent length can be elongated by balancing a Rashba SOI and all the terms of a Dresselhaus spin-orbit interaction. This technique will provide a new way of both suppressing spin relaxation and controlling the spin precession frequency when using the cubic Dresselhaus SOI.

Details

Database :
OpenAIRE
Journal :
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
Accession number :
edsair.doi...........7e2540edcaeee7e95acd96ff5cfec46a