Back to Search
Start Over
Spin coherence enhanced by in-plane electric field-induced spin-orbit interaction
- Source :
- 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
- Publication Year :
- 2016
- Publisher :
- IEEE, 2016.
-
Abstract
- We investigated the dependence of spatial spin distribution on bias voltage in a GaAs quantum well with Kerr rotation microscopy. The spin precession frequency of drifting spins depends on in-plane electric fields, which indicates that effective magnetic fields induced by spin-orbit interactions are modulated by in-plane electric fields. By comparing an experimental result and a theoretical simulation based on the Monte Carlo approach, we confirmed that the in-plane electric field dependence of effective magnetic fields can be attributed to the k-cubic term of the Dresselhaus spin-orbit interaction. We found that spin coherent length can be elongated by balancing a Rashba SOI and all the terms of a Dresselhaus spin-orbit interaction. This technique will provide a new way of both suppressing spin relaxation and controlling the spin precession frequency when using the cubic Dresselhaus SOI.
Details
- Database :
- OpenAIRE
- Journal :
- 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)
- Accession number :
- edsair.doi...........7e2540edcaeee7e95acd96ff5cfec46a