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The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study

Authors :
P. Moens
F. Geenen
L. De Schepper
JF Cano
J. Lettens
S. Maslougkas
J. Franchi
M. Domeij
Source :
2023 IEEE International Reliability Physics Symposium (IRPS).
Publication Year :
2023
Publisher :
IEEE, 2023.

Details

Database :
OpenAIRE
Journal :
2023 IEEE International Reliability Physics Symposium (IRPS)
Accession number :
edsair.doi...........7d8df0bd51893bfc6b4532399c3966f6