A Highly Reliable 0.18 μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide

Authors :: M. Inuishi
K. Shiga
Shigeto Maegawa
Yutaro Yamaguchi
Toshiaki Iwamatsu
Nobuyoshi Hattori
Takashi Ipposhi
Hideki Naruoka
Shigenobu Maeda
Yuuichi Hirano
Takuji Matsumoto
Source :: Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials.
Publication Year :: 2001
Publisher :: The Japan Society of Applied Physics, 2001.

Subjects :: chemistry.chemical_compound
Materials science
chemistry
Soi cmos technology
Trench
Oxide
Nanotechnology
Isolation (database systems)
Dual gate

Database :: OpenAIRE
Journal :: Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials
Accession number :: edsair.doi...........7d4f7db452eff5a2fd397305fa9d009b

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