Characterization of interstitial oxygen striations in silicon single crystals

Oxygen precipitation occurs along growth striations in Czochralski-grown (CZ) silicon single crystal. Interstitial oxygen (Oi) striations in various CZ and horizontal magnetic field Czochralski-grown (HMCZ) silicon single crystals were studied with a micro-Fourier transform infrared spectroscopy (micro-FTIR) mapping system. These striations were found in most crystals. The Oi profiles were irregular but their periods and heights were about 0.8 mm and 0.2 × 1017 atoms/cm3 except for several cases. Subsequently, oxygen microprecipitation was investigated for various conditions of thermal treatment. It was found that homogeneous nucleation was inferred to be operative in CZ and HMCZ crystals.