A Nanoscale‐Modified band energy junctionless transistor with considerable progress on the electrical and frequency issue

One of the serious prevalent weaknesses for silicon-on-insulator junctionless (CSOI-JLT) devices is high leakage current resulting in the limitation of it in nanoscale circuits. To solve this main concern, an efficient technique relying on the modification of band energy profile has been suggested. To reach this important achievement, a special part of the buried oxide (BOX) is replaced by the silicon material (Si) which is the same as the substrate in terms of type and doping concentration. Dividing the BOX redistributes the band energy and makes the channel region (Ch/R) near the source narrower which is desirable in the off-state situation. The considerable reduction of the leakage current and increase in the current gain (Ion/Ioff) is exhibited in the proposed structure. The modification of band energy for the suggested junctionless is announced as an initial start for improvement of the electrical performance in terms of leakage current, subthreshold swing (SS), global lattice temperature (GLT), electron velocity, output conductance, unilateral power gain, cut-off frequency, maximum oscillation frequency, total gate capacitance and minimum noise figure as compared to the common junctionless (CSOI-JLT).