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Probing Evolution of Twist-Angle-Dependent Interlayer Excitons in MoSe2/WSe2 van der Waals Heterostructures
- Source :
- ACS Nano. 11:4041-4050
- Publication Year :
- 2017
- Publisher :
- American Chemical Society (ACS), 2017.
-
Abstract
- Interlayer excitons were observed at the heterojunctions in van der Waals heterostructures (vdW HSs). However, it is not known how the excitonic phenomena are affected by the stacking order. Here, we report twist-angle-dependent interlayer excitons in MoSe2/WSe2 vdW HSs based on photoluminescence (PL) and vdW-corrected density functional theory calculations. The PL intensity of the interlayer excitons depends primarily on the twist angle: It is enhanced at coherently stacked angles of 0° and 60° (owing to strong interlayer coupling) but disappears at incoherent intermediate angles. The calculations confirm twist-angle-dependent interlayer coupling: The states at the edges of the valence band exhibit a long tail that stretches over the other layer for coherently stacked angles; however, the states are largely confined in the respective layers for intermediate angles. This interlayer hybridization of the band edge states also correlates with the interlayer separation between MoSe2 and WSe2 layers. Furthermo...
- Subjects :
- Coupling
Photoluminescence
Materials science
Condensed matter physics
Exciton
General Engineering
Stacking
General Physics and Astronomy
Heterojunction
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
Condensed Matter::Materials Science
symbols.namesake
Transition metal
Condensed Matter::Superconductivity
0103 physical sciences
symbols
General Materials Science
Density functional theory
van der Waals force
010306 general physics
0210 nano-technology
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi...........7c53edbba080a5e9c36447b2a4863c4f