Two-Dimensional Device Simulation of InGaAsP Ridge-Waveguide Lasers

Two-dimensional device simulator of laser diodes has been introduced and its capability for a quantitative device design of 1.3-µm InGaAsP ridge-waveguide lasers has been shown. It has been quantitatively clarified that the current spreading in the cladding layer plays a key role in determining the threshold current. In addition, it is found that the nonradiative recombination exerts a significant influence not only on the threshold current but also on the carrier distribution in the active layer, that is, the lateral gain profile.