Back to Search Start Over

Defect formation in silicon carbide large-scale ingots grown by sublimation technique

Authors :
A. V. Bulatov
Yu. M. Tairov
S.I. Dorozhkin
A.O. Lebedev
D. D. Avrov
Source :
Journal of Crystal Growth. 275:e485-e489
Publication Year :
2005
Publisher :
Elsevier BV, 2005.

Abstract

A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon particle suspended in a gas ambient appears to be a drag force, thermophoretic force being essential only for the relatively low temperatures (T 20 K/cm). It is shown that the radius of suspended particles may achieve hundreds of micrometers, and the data of calculations are in agreement with the experiment.

Details

ISSN :
00220248
Volume :
275
Database :
OpenAIRE
Journal :
Journal of Crystal Growth
Accession number :
edsair.doi...........7c26fd96b80e1baa070e591cf1b86bf8
Full Text :
https://doi.org/10.1016/j.jcrysgro.2004.11.112