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Defect formation in silicon carbide large-scale ingots grown by sublimation technique
- Source :
- Journal of Crystal Growth. 275:e485-e489
- Publication Year :
- 2005
- Publisher :
- Elsevier BV, 2005.
-
Abstract
- A model that includes both thermophoretic force and advective flow is developed to describe the mechanism of appearance of carbon macroinclusions in silicon carbide ingots grown by modified-Lely technique. The main moving force acting on the carbon particle suspended in a gas ambient appears to be a drag force, thermophoretic force being essential only for the relatively low temperatures (T 20 K/cm). It is shown that the radius of suspended particles may achieve hundreds of micrometers, and the data of calculations are in agreement with the experiment.
Details
- ISSN :
- 00220248
- Volume :
- 275
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi...........7c26fd96b80e1baa070e591cf1b86bf8
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2004.11.112