Implementation of ∑Δ ADC using electrically doped III‐V ternary alloy semiconductor nano‐wire TFET

In this work, a fast and low-power sigma delta ∑ Δ analogue-to-digital converter (ADC) has been developed using a hetero-material electrically-doped nano-wire tunnel field effect transistor (HM-ED-NW-TFET) for the first time. The better gate controllability of nano-wire and immunity against process variations of electrically doped tunnel field effect transistor (TFET) enhances resolution. In this regard, the first step that has been performed is the material engineering using A l x G a 1 − x Sb / GaA s 1 − y P y , to achieve significant driving current at low subthreshold swing and high I ON / I OFF ratio. Secondly, the mole fraction is optimised to upgrade the critical analogue component – the op-amp. Also, drain under lapping is included in p-TFET to bring its characteristics as close to n-TFET. Latter, the look-up tables of the proposed device has been generated which is used to develop individual block of ∑ Δ ADC in Cadence. The blocks are well verified and integrated into final ∑ Δ ADC and its performance is evaluated. Hence, this work has explored the inherent merits of HM-ED-NW-TFET in the development of low power and fast ∑ Δ ADC by virtue of a high slew rate op-amp. Therefore, this work contributes a novel approach to explore the characteristics of emerging devices in mixed signal applications.