High light extraction efficiency of InGaN-based light-emitting diodes using the systematic design of sub-wavelength photonic crystals

Authors :: S. F. Yu
V. C. Su
Ray-Ming Lin
Chia-Jung Hsieh
Yen-Pu Chen
Chieh-Hsiung Kuan
Yao-Hong You
Po-Hsun Chen
Ming-Lun Lee
Source :: IEEE Photonics Conference 2012.
Publication Year :: 2012
Publisher :: IEEE, 2012.
Abstract: This paper reports the high light extraction efficiency will be obtained by considering the systematic design of two-dimensional sub-wavelength photonic crystals, which is created on the p-side of InGaN-based light emitting diodes.

Subjects :: Materials science
business.industry
Extraction (chemistry)
Wide-bandgap semiconductor
Physics::Optics
Gallium nitride
Temperature measurement
law.invention
Sub wavelength
chemistry.chemical_compound
Optics
chemistry
law
Optoelectronics
business
Light-emitting diode
Photonic crystal

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