Ultra-low power LNA design technique for UWB applications

In this paper, a design technique to improve low noise amplifier (LNA) performance is proposed. This technique is based on a new operating parameter (OP) of MOSFETs for radio frequency (RF) applications. This technique is used to optimize low noise amplifier (LNA) parameters for Ultra-Wideband (UWB) applications. The presented methodology predicts the optimum biasing point to maximize LNA performance. Simulation results show that the proposed methodology can increase the figure of merit (FoM) by 70% compared to traditional methodologies, without having a significant effect on either noise figure (NF) or linearity characteristics.