Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

MLA

Yanmei Liu, et al. “Interface Chemistry and Electronic Structure of ALD-Derived HfAlO/Ge Gate Stacks Revealed by X-Ray Photoelectron Spectroscopy.” Journal of Alloys and Compounds, vol. 716, Sept. 2017, pp. 1–6. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........7b4d55e1d2516e9abe81111ff4244b45&authtype=sso&custid=ns315887.

APA

Yanmei Liu, Zhaoqi Sun, W.D. Li, Huaxin He, C.Y. Zheng, S.S. Jiang, Jing Li, Mao Liu, & Gang He. (2017). Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy. Journal of Alloys and Compounds, 716, 1–6.

Chicago

Yanmei Liu, Zhaoqi Sun, W.D. Li, Huaxin He, C.Y. Zheng, S.S. Jiang, Jing Li, Mao Liu, and Gang He. 2017. “Interface Chemistry and Electronic Structure of ALD-Derived HfAlO/Ge Gate Stacks Revealed by X-Ray Photoelectron Spectroscopy.” Journal of Alloys and Compounds 716 (September): 1–6. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsair&AN=edsair.doi...........7b4d55e1d2516e9abe81111ff4244b45&authtype=sso&custid=ns315887.