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Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
- Source :
- Journal of Alloys and Compounds. 716:1-6
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- In this article, the effect of annealing temperature on the electronic structure and interface chemistry of HfAlO/Ge gate stack grown by atomic layer deposition (ALD) have been investigated systematically. Based on characterization from x-ray photoelectron spectroscopy (XPS), the evolution of electronic structure and interface chemistry of HfAlO/Ge gate stacks as functions of annealing temperature been detected. With increasing the annealing temperature from 500 to 600 °C, crystallization of HfAlO gate dielectrics has been observed. Annealing the samples on 700 °C leads to the reduction of HfAlO component and the formation of Al 2 O 3 , which brings about the improved interface stability. The optimized interface chemistry related to annealing temperature indicates the potential application for HfAlO gate dielectrics in future Ge-based microelectronic device.
- Subjects :
- 010302 applied physics
Materials science
Annealing (metallurgy)
Mechanical Engineering
Metals and Alloys
Analytical chemistry
chemistry.chemical_element
Germanium
02 engineering and technology
Electronic structure
021001 nanoscience & nanotechnology
01 natural sciences
Electron spectroscopy
law.invention
Atomic layer deposition
X-ray photoelectron spectroscopy
chemistry
Mechanics of Materials
law
0103 physical sciences
Materials Chemistry
Crystallization
0210 nano-technology
Spectroscopy
Subjects
Details
- ISSN :
- 09258388
- Volume :
- 716
- Database :
- OpenAIRE
- Journal :
- Journal of Alloys and Compounds
- Accession number :
- edsair.doi...........7b4d55e1d2516e9abe81111ff4244b45