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Fabrication of InGaAsP/InP Mach-Zehnder interferometer optical amplifier switches by metalorganic vapor phase selective area epitaxy
- Source :
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198).
- Publication Year :
- 2002
- Publisher :
- IEEE, 2002.
-
Abstract
- Recent ultra-fast optical-fiber communication systems require various functional optical components, such as all optical switches. We have fabricated InGaAsP/InP Mach-Zehnder interferometer optical switches monolithically integrated with semiconductor optical amplifiers (SOAs) using a single-step MOVPE selective area growth and two types of patterning and etching process. Preliminary optical switching experiment revealed large carrier-induced index change in the selective-area-grown multiple quantum well SOAs. Furthermore, all optical switching experiment has successfully been demonstrated in these fabricated devices.
Details
- Database :
- OpenAIRE
- Journal :
- Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198)
- Accession number :
- edsair.doi...........7b49570a92b0150b2329c742ab36c7c6
- Full Text :
- https://doi.org/10.1109/iciprm.2001.929218