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Controlled epitaxial graphene growth within removable amorphous carbon corrals
- Source :
- Applied Physics Letters. 105:023106
- Publication Year :
- 2014
- Publisher :
- AIP Publishing, 2014.
-
Abstract
- We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
business.industry
Graphene
Annealing (metallurgy)
Crystal growth
Epitaxy
law.invention
symbols.namesake
chemistry.chemical_compound
Vacuum deposition
chemistry
Amorphous carbon
law
symbols
Silicon carbide
Optoelectronics
business
Raman spectroscopy
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 105
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........7b16773e4e7c5b19632f9d7f333e21f5