Attenuated phase shifting masks in combination with off-axis illumination: a way towards quarter micron DUV lithography for random logic applications

Authors :: Rik Jonckheere
L. Van den hove
Kurt G. Ronse
Rainer Pforr
Ki-Ho Baik
Source :: Microelectronic Engineering. 23:133-138
Publication Year :: 1994
Publisher :: Elsevier BV, 1994.
Abstract: The combination of off-axis illumination (OAI) schemes with ‘weak’ phase shifting techniques is promising to improve the process latitudes of both dense and isolated features. In this paper, the performance of this combination to print 0.25 μm poly levels for logic circuits is investigated experimentally and by simulations, using DUV stepper ( λ = 0.248 μm , 0.42 NA ). Various resist types have been addressed, mainly with respect to proximity issues.

Subjects :: Materials science
business.industry
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Optics
Resist
Logic gate
Off-axis illumination
Electrical and Electronic Engineering
Stepper
business
Random logic
Lithography

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