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Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements
- Source :
- Journal of Applied Physics. 119:125701
- Publication Year :
- 2016
- Publisher :
- AIP Publishing, 2016.
-
Abstract
- Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ∼1017 cm−3—to a C-content of ∼1019 cm−3 in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ∼1019 cm−3. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 1020 cm−3. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Doping
Analytical chemistry
Wide-bandgap semiconductor
General Physics and Astronomy
Heterojunction
02 engineering and technology
Atom probe
021001 nanoscience & nanotechnology
Mass spectrometry
01 natural sciences
law.invention
Secondary ion mass spectrometry
law
0103 physical sciences
Optoelectronics
Electric current
0210 nano-technology
business
Current density
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 119
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi...........7a8d7c5a6c7d6ad244debb019b9268c3
- Full Text :
- https://doi.org/10.1063/1.4944652